2.7 W tunable orange-red GaInNAs semiconductor disk laser.
Identifieur interne : 002837 ( Main/Exploration ); précédent : 002836; suivant : 0028382.7 W tunable orange-red GaInNAs semiconductor disk laser.
Auteurs : RBID : pubmed:19551132English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Gallium, Indium.
- Color, Computer-Aided Design, Equipment Design, Equipment Failure Analysis, Lasers, Semiconductor, Reproducibility of Results, Sensitivity and Specificity.
Abstract
We report on a GaInNAs/GaAs semiconductor disk laser frequency-doubled to produce orange-red radiation. The disk laser operates at a fundamental wavelength of 1224 nm and delivers an output power of 2.68 W in the visible region with an optical-to-optical conversion efficiency of 7.4%. The frequency-converted signal could be launched into a singlemode optical fiber with 70-78% coupling efficiency, demonstrating good beam quality for the visible radiation. Using a Fabry-Pérot glass etalon the emission wavelength could be tuned over an 8 nm spectral range.
PubMed: 19551132
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">2.7 W tunable orange-red GaInNAs semiconductor disk laser.</title><author><name sortKey="Rautiainen, J" uniqKey="Rautiainen J">J Rautiainen</name><affiliation wicri:level="1"><nlm:affiliation>Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. jussi.rautiainen@tut.fi</nlm:affiliation><country xml:lang="fr">Finlande</country><wicri:regionArea>Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere</wicri:regionArea></affiliation></author><author><name sortKey="H Rk Nen, A" uniqKey="H Rk Nen A">A Härkönen</name></author><author><name sortKey="Korpij Rvi, V M" uniqKey="Korpij Rvi V">V-M Korpijärvi</name></author><author><name sortKey="Tuomisto, P" uniqKey="Tuomisto P">P Tuomisto</name></author><author><name sortKey="Guina, M" uniqKey="Guina M">M Guina</name></author><author><name sortKey="Okhotnikov, O G" uniqKey="Okhotnikov O">O G Okhotnikov</name></author></titleStmt><publicationStmt><date when="2007">2007</date><idno type="RBID">pubmed:19551132</idno><idno type="pmid">19551132</idno><idno type="wicri:Area/Main/Corpus">002542</idno><idno type="wicri:Area/Main/Curation">002542</idno><idno type="wicri:Area/Main/Exploration">002837</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Color</term><term>Computer-Aided Design</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Gallium (chemistry)</term><term>Indium (chemistry)</term><term>Lasers, Semiconductor</term><term>Reproducibility of Results</term><term>Sensitivity and Specificity</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Gallium</term><term>Indium</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Color</term><term>Computer-Aided Design</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Lasers, Semiconductor</term><term>Reproducibility of Results</term><term>Sensitivity and Specificity</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on a GaInNAs/GaAs semiconductor disk laser frequency-doubled to produce orange-red radiation. The disk laser operates at a fundamental wavelength of 1224 nm and delivers an output power of 2.68 W in the visible region with an optical-to-optical conversion efficiency of 7.4%. The frequency-converted signal could be launched into a singlemode optical fiber with 70-78% coupling efficiency, demonstrating good beam quality for the visible radiation. Using a Fabry-Pérot glass etalon the emission wavelength could be tuned over an 8 nm spectral range.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">19551132</PMID><DateCreated><Year>2009</Year><Month>06</Month><Day>24</Day></DateCreated><DateCompleted><Year>2009</Year><Month>07</Month><Day>24</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>15</Volume><Issue>26</Issue><PubDate><Year>2007</Year><Month>Dec</Month><Day>24</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>2.7 W tunable orange-red GaInNAs semiconductor disk laser.</ArticleTitle><Pagination><MedlinePgn>18345-50</MedlinePgn></Pagination><Abstract><AbstractText>We report on a GaInNAs/GaAs semiconductor disk laser frequency-doubled to produce orange-red radiation. The disk laser operates at a fundamental wavelength of 1224 nm and delivers an output power of 2.68 W in the visible region with an optical-to-optical conversion efficiency of 7.4%. The frequency-converted signal could be launched into a singlemode optical fiber with 70-78% coupling efficiency, demonstrating good beam quality for the visible radiation. Using a Fabry-Pérot glass etalon the emission wavelength could be tuned over an 8 nm spectral range.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Rautiainen</LastName><ForeName>J</ForeName><Initials>J</Initials><Affiliation>Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. jussi.rautiainen@tut.fi</Affiliation></Author><Author ValidYN="Y"><LastName>Härkönen</LastName><ForeName>A</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Korpijärvi</LastName><ForeName>V-M</ForeName><Initials>VM</Initials></Author><Author ValidYN="Y"><LastName>Tuomisto</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Guina</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Okhotnikov</LastName><ForeName>O G</ForeName><Initials>OG</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>gallium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>indium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Color</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Computer-Aided Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Lasers, Semiconductor</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Reproducibility of Results</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Sensitivity and Specificity</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2009</Year><Month>6</Month><Day>25</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2007</Year><Month>12</Month><Day>24</Day><Hour>0</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2009</Year><Month>7</Month><Day>25</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">148635</ArticleId><ArticleId IdType="pubmed">19551132</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV2/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002837 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 002837 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV2
|flux= Main
|étape= Exploration
|type= RBID
|clé= pubmed:19551132
|texte= 2.7 W tunable orange-red GaInNAs semiconductor disk laser.
}}
Pour générer des pages wiki
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Exploration/RBID.i -Sk "pubmed:19551132" \
| HfdSelect -Kh $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd \
| NlmPubMed2Wicri -a IndiumV2
| This area was generated with Dilib version V0.5.76. |  |